DETAILS, FICTION AND N TYPE GE

≤ 0.fifteen) is epitaxially grown on a SOI substrate. A thinner layer of Si is developed on this SiGe layer, and after that the framework is cycled as a result of oxidizing and annealing levels. Mainly because of the preferential oxidation of Si around Ge [68], the initial Si1–s in biaxially compressive strained QWs from Shubnikov-de Haas or cy